| PART |
Description |
Maker |
| 2SC3053 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC3351-T2B 2SC3351-T1B |
For amplify low noise and high frequency.
|
NEC
|
| 2SC547710 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1364 |
Low Frequency Power Amplify Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SJ14510 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK43310 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| INC6007AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INC6006AS1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Cor...
|
| INA6002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
